The C3M0065100K is a 1000 V, 65 mΩ Silicon Carbide (SiC) MOSFET based on C3M technology. It features high blocking voltage, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery (Qrr). The device is housed in a TO-247-4 package which includes a Kelvin source pin to reduce switching losses and minimize gate ringing.
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Wolfspeed C3M0065100K technical specifications.
| Drain-Source Voltage (Vds) | 1000V |
| On-Resistance (Rds on) at 25°C | 65mΩ |
| Continuous Drain Current (Id) at 25°C | 35A |
| Power Dissipation (Pd) at 25°C | 113.5W |
| Maximum Junction Temperature (Tjmax) | 150°C |
| Total Gate Charge (Qg) | 56nC |
| RoHS | Compliant |
| Halogen Free | Yes |
| REACH | Compliant |
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