The C4MS025120J2-TR is a 4th Generation Silicon Carbide (SiC) MOSFET designed for high-performance power conversion. It features a fast and soft body diode that enables fast switching with minimal overshoot and ringing. Compared to previous generations, it provides improved Eon, ERR, and Eoff losses while maintaining a low RDS(on) temperature coefficient, making it suitable for both hard-switched and soft-switched topologies.
Wolfspeed C4MS025120J2-TR technical specifications.
| Blocking Voltage | 1200V |
| RDS(ON) at 25°C | 25mΩ |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Minimum Junction Temperature (Tjmin) | -40°C |
| Gate-Source Voltage Range (Static) | -4 to 0 / 15 to 18V |
| Technology Type | N-Channel Enhancement Mode |
| ECCN | EAR99 |
| Qualification | Industrial |
| California Prop 65 | Compliant |
No datasheet is available for this part.
