The C4MS036120J2 is a 1200 V, 36 mΩ discrete Silicon Carbide (SiC) MOSFET from the C4MS family, designed for improved switching performance in hard-switched applications. It features a fast and soft body diode with low overshoot and ringing, and provides reduced Eon, Err, and Eoff losses compared to previous generations while maintaining a low RDS(on) temperature coefficient. It offers wide gate voltage compatibility and transient overvoltage capability.
Wolfspeed C4MS036120J2-TR technical specifications.
| Blocking Voltage | 1200V |
| RDS(ON) at 25°C | 36mΩ |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Minimum Junction Temperature (Tjmin) | -40°C |
| Gate Voltage Compatibility (Negative) | -4 to 0V |
| Gate Voltage Compatibility (Positive) | 15 to 18V |
| ECCN | EAR99 |
No datasheet is available for this part.
