The C4MS036120U2-TR is a Gen 4 1200V Silicon Carbide (SiC) MOSFET designed for high-performance hard-switched applications. It features a fast and soft body diode with low overshoot and ringing, high Ciss/Crss ratio, and a low RDS(on) temperature coefficient. This N-channel enhancement mode transistor is housed in a Top Side Cooled (TSC) U2 package, offering improved energy losses (Eon, Err, Eoff) compared to previous generations and is optimized for low-voltage industrial drives and power supplies.
Wolfspeed C4MS036120U2-TR technical specifications.
| Drain-Source Voltage (Vds) | 1200V |
| Drain-Source Resistance (Rds On) @ 25°C | 36mOhms |
| Continuous Drain Current (Id) @ 25°C | 69A |
| Power Dissipation (Pd) | 357W |
| Gate-Source Voltage (Vgs) | -10 to +23V |
| Gate-Source Threshold Voltage (Vgs th) | 2.6V |
| Total Gate Charge (Qg) | 88nC |
| Operating Temperature Range | -40 to +175°C |
| Rise Time | 3ns |
| Fall Time | 4ns |
| Turn-On Delay Time | 12ns |
| Turn-Off Delay Time | 29ns |
| ECCN | EAR99 |
| Qualification | Industrial |
No datasheet is available for this part.
