The C4MS065120K1 is a 1200V discrete Gen 4 Silicon Carbide MOSFET designed for hard-switched and soft-switched topologies. It features a fast and soft body diode with minimal overshoot and ringing, improved Eon and Eoff losses compared to previous generations, and a low RDS(on) temperature coefficient. The device is qualified for industrial applications and features a TO-247-4-LP package for optimized thermal and electrical performance.
Wolfspeed C4MS065120K1 technical specifications.
| Drain-Source Voltage (Vds) | 1200V |
| On-Resistance (RDS(on)) @ 25°C | 65mΩ |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Minimum Operating Temperature (Tjmin) | -40°C |
| Gate-Source Voltage (Vgs) Range | -4 to +18V |
| ECCN | EAR99 |
| RoHS | Compliant |
| California Prop 65 | Compliant |
No datasheet is available for this part.
