The CGHV1J070D-GP4 is a gallium nitride (GaN) high electron mobility transistor (HEMT) die designed for high frequency applications up to 18 GHz. It operates from a 40V rail and provides 70W of output power with high efficiency and gain, utilizing GaN-on-Silicon Carbide technology for superior power density and thermal management in aerospace and defense applications.
Voltage40V
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Technical Specifications
Wolfspeed CGHV1J070D-GP4 technical specifications.
General
| Maximum Frequency | 18GHz |
| Output Power (Pout) | 70W |
| Operating Voltage | 40V |
| Typical Gain | 17dB |
| Drain Efficiency | 60% |
| Technology | GaN on SiC |
Compliance
| RoHS | Compliant |
| REACH | Compliant |
Datasheet
Wolfspeed CGHV1J070D-GP4 Datasheet
Download the complete datasheet for Wolfspeed CGHV1J070D-GP4 to view detailed technical specifications.
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