The CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-Band radar amplifier applications. This 150V, 24A RF MOSFET offers high efficiency, high gain, and wide bandwidth capabilities, typically delivering 455W of output power within the 2.9 to 3.5 GHz frequency range.
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| Operating Frequency | 2.9 - 3.5GHz |
| Output Power (Pout) | 455W |
| Power Gain | 11dB |
| Drain Source Voltage (Vds) | 125V |
| Test Voltage | 45V |
| Drain Current (Id) | 24A |
| Efficiency | 55% |
| RoHS | Compliant |
| Lead Free | Yes |
