The CGHV40100F is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). The CGHV40100F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100F ideal for linear and pulsed amplifier circuits. The transistor is available in a 2-lead flange package.
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Technical Specifications
Wolfspeed CGHV40100F technical specifications.
General
| Frequency Range | DC - 3GHz |
| Output Power (Pout) | 100W |
| Drain Source Voltage (Vds) | 50V |
| Power Gain | 11.5dB |
| Drain Efficiency | 55% |
| Operating Case Temperature | -40 to +150°C |
Compliance
| RoHS | Compliant |
| REACH | Unaffected |
Datasheet
Wolfspeed CGHV40100F Datasheet
Download the complete datasheet for Wolfspeed CGHV40100F to view detailed technical specifications.
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