The WAB400M12BM3 is a Half-Bridge Silicon Carbide (SiC) power module utilizing third-generation conduction-optimized MOSFET technology. It is housed in an industry-standard 62 mm footprint and features a Silicon Nitride (SiN) insulator with a copper baseplate for enhanced thermal performance. The module is designed for high-power industrial applications, offering high humidity operation (THB-80 qualified) and a high maximum junction temperature of 175 °C.
Wolfspeed WAB400M12BM3 technical specifications.
| Drain-to-Source Voltage (Vdss) | 1200V |
| Continuous Drain Current (Id) @ 25°C | 468A |
| Continuous Drain Current (Id) @ 90°C | 400A |
| Drain-Source On-State Resistance (Rds On) Max | 4.25mOhm |
| Gate Charge (Qg) | 1040nC |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Internal Inductance | 10.2nH |
| Input Capacitance (Ciss) | 29700pF |
| RoHS | Compliant |
| Reliability | THB-80 (HV-H3TRB) Qualified |
No datasheet is available for this part.
