N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a continuous drain current (I(D)) of 0.34A and a drain-source voltage (V(DS)) of 50V. This single-element transistor has three terminals and operates across a temperature range of -55°C to 150°C.
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Technical Specifications
Yangzhou Yangjie Electronics BSS138 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Yangzhou Yangjie Electronics BSS138 Datasheet
Download the complete datasheet for Yangzhou Yangjie Electronics BSS138 to view detailed technical specifications.
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