N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a continuous drain current (I(D)) of 0.34A and a drain-source voltage (V(DS)) of 50V. This single-element transistor has three terminals and operates across a temperature range of -55°C to 150°C.
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Technical Specifications
Yangzhou Yangjie Electronics BSS138 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Compliance
REACH
unknown
Military Spec
False
Datasheet
Yangzhou Yangjie Electronics BSS138 Datasheet
Download the complete datasheet for Yangzhou Yangjie Electronics BSS138 to view detailed technical specifications.
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