P-channel silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a maximum drain current of 0.17A and a breakdown voltage of 60V. Operates reliably across a wide temperature range from -55°C to 150°C. This three-terminal device offers dual terminal positioning for flexible integration.
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Technical Specifications
Yangzhou Yangjie Electronics BSS84 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Yangzhou Yangjie Electronics BSS84 Datasheet
Download the complete datasheet for Yangzhou Yangjie Electronics BSS84 to view detailed technical specifications.
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