P-channel silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a maximum drain current of 0.17A and a breakdown voltage of 60V. Operates reliably across a wide temperature range from -55°C to 150°C. This three-terminal device offers dual terminal positioning for flexible integration.
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Technical Specifications
Yangzhou Yangjie Electronics BSS84 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Yangzhou Yangjie Electronics BSS84 Datasheet
Download the complete datasheet for Yangzhou Yangjie Electronics BSS84 to view detailed technical specifications.
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