
The BC557_Q PNP transistor from Onsemi features a TO-92 package with a maximum operating temperature of 150°C and a maximum power dissipation of 500mW. It has a collector-emitter voltage maximum of -45V and a collector base voltage of -50V. The device has a minimum current gain of 110 and a gain bandwidth product of 150MHz. It is suitable for use in applications requiring a PNP transistor with high current gain and fast switching times.
Onsemi BC557_Q technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Saturation Voltage | -45V |
| Collector-emitter Voltage-Max | -45V |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Packaging | Bulk |
| Polarity | PNP |
| Series | BC557 |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC557_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
