Advanced Power Technology
APT1004R2BN
Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Technical Specifications
Advanced Power Technology APT1004R2BN technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247AD
Number of Elements
1
Compliance
RoHS
No
REACH
unknown
Military Spec
False
Datasheet
Advanced Power Technology APT1004R2BN Datasheet
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