Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Advanced Power Technology APT10M07JVFR technical specifications.
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
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