Advanced Power Technology
APT10M07JVR
Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Technical Specifications
Advanced Power Technology APT10M07JVR technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Advanced Power Technology APT10M07JVR Datasheet
Download the complete datasheet for Advanced Power Technology APT10M07JVR to view detailed technical specifications.
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