Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Advanced Power Technology APT6015JN technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Advanced Power Technology APT6015JN to view detailed technical specifications.
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