N-Channel Silicon Carbide MOSFET, 1700V breakdown voltage, 5.3A continuous drain current, and 1.4Ω on-resistance. This single-element, 7-terminal power field-effect transistor features a D2PAK-7 package and operates across a temperature range of -55°C to 150°C. Designed for high-power applications, it utilizes metal-oxide semiconductor field-effect transistor technology.
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Technical Specifications
Cree C2M1000170J technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 7 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Cree C2M1000170J Datasheet
Download the complete datasheet for Cree C2M1000170J to view detailed technical specifications.
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