High-performance RF power field-effect transistor designed for demanding applications. Features advanced GaN-on-SiC technology for superior efficiency and power handling. Optimized for high-frequency operation, delivering exceptional gain and linearity. Ideal for power amplification stages in wireless infrastructure and radar systems.
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Technical Specifications
Cree CG2H40025F technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Cree CG2H40025F Datasheet
Download the complete datasheet for Cree CG2H40025F to view detailed technical specifications.
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