Cree
CGH35240F
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-2
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-2
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Technical Specifications
Cree CGH35240F technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Cree CGH35240F Datasheet
Download the complete datasheet for Cree CGH35240F to view detailed technical specifications.
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