RF Power GaN HEMT transistor delivering 6W maximum output power with 8W typical output power. Features 13dB gain, a single channel, and operates across a wide temperature range from -40°C to 150°C. This component is rated for 84V and a test voltage of 28V, housed in a pill package. It is RoHS compliant and available in rail/tube packaging.
Cree CGH40006P technical specifications.
| Gain | 13dB |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Power | 6W |
| Number of Channels | 1 |
| Output Power | 8W |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GaN |
| Test Voltage | 28V |
| Voltage Rating | 84V |
| RoHS | Compliant |
No datasheet is available for this part.
