High-power RF MOSFET HEMT operating at up to 6GHz, delivering 10W max output power with 65% efficiency. Features a 120V drain-source voltage rating and 1.5A continuous drain current. This single-channel, GaN series component offers a 14.5dB gain and operates across a -40°C to 150°C temperature range. RoHS compliant and available in tray packaging.
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Cree CGH40010F technical specifications.
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 84V |
| Drain to Source Voltage (Vdss) | 120V |
| Efficiency | 65% |
| Gain | 14.5dB |
| Gate to Source Voltage (Vgs) | -10V |
| Max Frequency | 6GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Power | 10W |
| Number of Channels | 1 |
| Output Power | 12.5W |
| Packaging | Tray |
| Power Dissipation | 14W |
| RoHS Compliant | Yes |
| Series | GaN |
| Test Voltage | 28V |
| Voltage Rating | 84V |
| RoHS | Compliant |
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