2ED1324S12P
Infineon
EVAL-2ED1324S12PM1 is designed to evaluate the 1200 V SOI half-bridge gate driver 2ED1324S12P
Design DocumentInfineon
EVAL-2ED1324S12PM1 User Guide: 1200 V SOI Gate Driver Evaluation Board
User guide for EVAL-2ED1324S12PM1 evaluation board featuring the 2ED1324S12P 1200V SOI gate driver and FP25R12W1T7_B11 EasyPIM 1B IGBT7 module for motor drive applications.
Overview
This user guide describes the EVAL-2ED1324S12PM1 power evaluation board, designed to demonstrate Infineon's Silicon-on-Insulator (SOI) gate driver and IGBT7 technology. The board features the 2ED1324S12P 1200 V SOI half-bridge gate driver and the FP25R12W1T7_B11 EasyPIM 1B 1200 V, 25 A three-phase input rectifier module. It is designed for motor drive applications and includes an M1 connector for compatibility with control boards such as the EVAL-M1-101T. The document provides technical specifications, pin assignments, mechanical dimensions, and setup instructions for Brushless DC (BLDC) motor control. Key onboard components include the ICE5QSAG quasi-resonant flyback controller, IMBF170R1K0M1 CoolSiC MOSFET, and IFX25001TF V33 regulator.
Use Cases
- Industrial motor drives
- Brushless DC (BLDC) motor control
- Evaluation of 1200 V SOI gate drivers
- Testing of EasyPIM 1B IGBT7 power modules
- Prototyping electronic converters
Topics
2ED1324S12P
FP25R12W1T7_B11
1200 V SOI gate driver
IGBT7
EasyPIM 1B
motor drive
BLDC motor control
EVAL-2ED1324S12PM1
ICE5QSAG
IMBF170R1K0M1
IFX25001TF V33
Silicon-on-Insulator
Referenced Parts
ICE5QSAG
Infineon
quasi-resonant, pulse-width modulation (PWM) controller; a CoolSiCTM MOSFET-based auxiliary power supply
IMBF170R1K0M1
Infineon
IMBF170R1K0M1 PG-TO263-7 Tape and Reel 1000 IMBF170R1K0M1XTMA1
ED1324S12P
Infineon
1200 V half-bridge gate-driver with | overcurrent protection | Infineon | Technologies 2ED1324S12P | 2 Q1 (mother board)
R12W1T7_B11
Infineon
module with TRENCHSTOP™ | IGBT7 | Infineon | Technologies FP25R12W1T7_B11 | 3 U1 (mother board) Quasi-resonant controller Infineon
R1K0M1
Infineon
4 Q2 (mother board) 1700 V/1 Ω SiC MOSFET in TO263-7 | package | Infineon | Technologies IMBF170R1K0M1 | 5 G1 (mother board) 5 V/400 mA linear voltage
V33
Infineon
5 G1 (mother board) 5 V/400 mA linear voltage | regulator | Infineon | Technologies IFX25001TF V33 | 6 R15, R16, R17
IGBT7
Infineon
EasyPIM™ 1B power integrated | module with TRENCHSTOP™ | IGBT7 | Infineon | Technologies FP25R12W1T7_B11
| 2ED1324S12P | Infineon | EVAL-2ED1324S12PM1 is designed to evaluate the 1200 V SOI half-bridge gate driver 2ED1324S12P |
| FP25R12W1T7_B11 | Infineon | EasyPIM™ 1B IGBT 7 power integrated module FP25R12W1T7_B11 |
| IFX25001TFV33 | Infineon | IFX25001TF V33 PG-TO252-3 Tape and Reel 2500 IFX25001TFV33ATMA2 |
| IMC101T-T038 | Infineon | latest IMC101T-T038 MCE software package |
| ICE5QSAG | Infineon | quasi-resonant, pulse-width modulation (PWM) controller; a CoolSiCTM MOSFET-based auxiliary power supply |
| IMBF170R1K0M1 | Infineon | IMBF170R1K0M1 PG-TO263-7 Tape and Reel 1000 IMBF170R1K0M1XTMA1 |
| ED1324S12P | Infineon | 1200 V half-bridge gate-driver with | overcurrent protection | Infineon | Technologies 2ED1324S12P | 2 Q1 (mother board) |
| R12W1T7_B11 | Infineon | module with TRENCHSTOP™ | IGBT7 | Infineon | Technologies FP25R12W1T7_B11 | 3 U1 (mother board) Quasi-resonant controller Infineon |
| R1K0M1 | Infineon | 4 Q2 (mother board) 1700 V/1 Ω SiC MOSFET in TO263-7 | package | Infineon | Technologies IMBF170R1K0M1 | 5 G1 (mother board) 5 V/400 mA linear voltage |
| V33 | Infineon | 5 G1 (mother board) 5 V/400 mA linear voltage | regulator | Infineon | Technologies IFX25001TF V33 | 6 R15, R16, R17 |
| IGBT7 | Infineon | EasyPIM™ 1B power integrated | module with TRENCHSTOP™ | IGBT7 | Infineon | Technologies FP25R12W1T7_B11 |