This 1200 V half-bridge gate driver IC is intended for SiC MOSFET and IGBT power devices and uses functional level-shift SOI isolation. It provides 2.3 A peak source and sink drive capability, 500 ns turn-on and turn-off propagation delays, and undervoltage lockout with 12.2 V turn-on and 11.3 V turn-off thresholds on both VBS and VCC. Integrated active Miller clamp, short-circuit clamp, over-current protection, cross-conduction prevention, and an ultra-fast bootstrap diode support robust high-voltage switching. The device is qualified for industrial applications and is offered in the PG-DSO-20 package with tape-and-reel packing.
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| Channels | 2 |
| Configuration | Half-Bridge |
| Voltage Class | 1200V |
| Input VCC min | 13V |
| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Output Current (Source) | 2.3A |
| Output Current (Sink) | 2.3A |
| Turn On Propagation Delay | 500ns |
| Turn Off Propagation Delay | 500ns |
| VBS UVLO On | 12.2V |
| VBS UVLO Off | 11.3V |
| VCC UVLO On | 12.2V |
| VCC UVLO Off | 11.3V |
| Qualification | Industrial |
| Bootstrap Voltage Max (VB node) | +1225V |
| Active Miller Clamp | Integrated |
| Short Circuit Clamp | Integrated |
| Over-current Protection | Integrated |
| Bootstrap Diode | Integrated ultra-fast |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
These are design resources that include the Infineon 2ED1324S12P
User guide for EVAL-2ED1324S12PM1 evaluation board featuring the 2ED1324S12P 1200V SOI gate driver and FP25R12W1T7_B11 EasyPIM 1B IGBT7 module for motor drive applications.
