EPC2007C

N-Channel Gallium Nitride (GaN) Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a low on-resistance of 0.03 ohms and a drain-source voltage rating of 100V, with a continuous drain current capability of 6A. This single-element device utilizes a 5-terminal die package, offering a compact and efficient solution. It is HALOGEN FREE and ROHS COMPLIANT.