N-Channel Gallium Nitride (GaN) Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a low on-resistance of 0.03 ohms and a drain-source voltage rating of 100V, with a continuous drain current capability of 6A. This single-element device utilizes a 5-terminal die package, offering a compact and efficient solution. It is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2007C technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2007C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2007C to view detailed technical specifications.
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