N-channel Gallium Nitride (GaN) power MOSFET featuring a low on-resistance of 0.008 ohms and a drain-source voltage rating of 200V. This single-element transistor is designed for high-power applications, capable of handling a continuous drain current of 48A. It operates within a temperature range of -40°C to 150°C and utilizes a 24-terminal die with upper terminal positioning.
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Technical Specifications
Efficient Power Conversion EPC2034C technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 24 |
| Min Operating Temperature | -40 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2034C Datasheet
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