N-channel Gallium Nitride (GaN) power MOSFET featuring a low on-resistance of 0.008 ohms and a drain-source voltage rating of 200V. This single-element transistor is designed for high-power applications, capable of handling a continuous drain current of 48A. It operates within a temperature range of -40°C to 150°C and utilizes a 24-terminal die with upper terminal positioning.
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Technical Specifications
Efficient Power Conversion EPC2034C technical specifications.
General
Max Operating Temperature
150
Number of Terminals
24
Min Operating Temperature
-40
Terminal Position
UPPER
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Efficient Power Conversion EPC2034C Datasheet
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