N-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for high-power applications. Features a low on-resistance of 0.0038 ohms and a drain-source voltage rating of 100V. Supports a continuous drain current of 48A. Operates across a temperature range of -40°C to 150°C. This single-element device is presented in a DIE-28 package.
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Technical Specifications
Efficient Power Conversion EPC2053 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
28
Min Operating Temperature
-40
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Efficient Power Conversion EPC2053 Datasheet
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