Power Field-Effect Transistor, 23A I(D), 60V, 0.0044ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75
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Efficient Power Conversion EPC2102 technical specifications.
| Number of Terminals | 75 |
| Terminal Position | UPPER |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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