The EPC2202 is an AEC-Q101 qualified enhancement mode Gallium Nitride (GaN) power transistor. It features exceptionally high electron mobility and a low temperature coefficient, resulting in very low drain-source on-resistance (RDS(on)) and zero reverse recovery charge (QRR). It is designed for high-frequency switching applications and high-power density power conversion within automotive environments.
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Efficient Power Conversion EPC2202 technical specifications.
| Drain-to-Source Voltage (VDS) | 80V |
| Drain-Source On Resistance (RDS(on)) | 17mΩ |
| Continuous Drain Current (ID) | 18A |
| Pulsed Drain Current (ID) | 75A |
| Gate-to-Source Voltage (VGS) | 5.75V |
| Total Gate Charge (QG) | 2.2nC |
| Operating Temperature (TJ) | -55 to 150°C |
| Die Size | 2.1 x 1.6mm |
| Automotive Qualification | AEC-Q101 |
| Halogen-free | Yes |
| RoHS | Compliant |
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