Insulated Gate Bipolar Transistor, 400A I(C), 650V V(BR)CES, N-Channel, MODULE-7

FUJI ELECTRIC 2MBI400U4H-120-50 IGBT Array & Module Transistor, N Channel, 400 A, 2.05 V, 2.045 kW, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M235, 7 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,

FUJI ELECTRIC 2MBI300U2B-060-50 IGBT Array & Module Transistor, N Channel, 300 A, 2.45 V, 1 kW, 600 V, Module
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7