Search Results for "2N1711S"

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

NPN BJT Transistor, 50V, 500mA, 100MHz, TO-39

MULTICOMP - 2N1711 - TRANSISTOR

BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE

BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE

BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE

Trans GP BJT NPN 3-Pin TO-5

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 300V V(DRM), 300V V(RRM), 1 Element

7.4A, 400V, SCR, TO-64

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 500V V(DRM), 500V V(RRM), 1 Element

Silicon Controlled Rectifier, 8A I(T)RMS, 4700mA I(T), 500V V(DRM), 500V V(RRM), 1 Element, TO-64

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

Silicon Controlled Rectifier, 8A I(T)RMS, 4700mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-64

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 150V V(DRM), 150V V(RRM), 1 Element

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 250V V(DRM), 250V V(RRM), 1 Element

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,