
BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:-; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; No. of Pins:2; MSL:-; Packaging:Each ;RoHS Compliant: Yes
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, HERMETIC SEALED, TO-18, 3 PIN
Power Bipolar Transistor, 3A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN