Power Field-Effect Transistor, 10A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
EE PLD, 5.5ns, 64-Cell, CMOS, PQFP100, 14 X 14 MM, 0.50 MM PITCH, TQFP-100
EE PLD, 5.5ns, 64-Cell, CMOS, PQFP44, 10 X 10 MM, 0.80 MM PITCH, TQFP-44