Inductor RF Chip Unshielded Wirewound 10uH 5% 2.5MHz 12Q-Factor Ceramic/Ferrite 0.18A 4.8Ohm DCR 0603 Automotive T/R
10uH 5% SMD Wirewound Inductor, 7.9MHz, 300mA, Ferrite/Ceramic
Inductor RF Chip Unshielded Wirewound 10uH 5% 2.5MHz 18Q-Factor Ceramic/Ferrite 0.2A 3.45Ohm DCR 0805 Automotive T/R
Inductor RF Chip Unshielded Wirewound 10uH 5% 7.9MHz 37Q-Factor Ceramic/Ferrite 0.3A 2.95Ohm DCR 1008 Automotive T/R
Inductor RF Chip Unshielded Wirewound 10uH 5% 2.5MHz 24Q-Factor Ferrite 0.55A 0.46Ohm DCR 1008 T/R
Inductor RF Chip Unshielded Wirewound 10uH 5% 7.9MHz 36Q-Factor Ceramic 0.19A 7.7Ohm DCR 1812 Automotive T/R
Inductor RF Chip Unshielded Wirewound 10uH 5% 7.9MHz 31Q-Factor Ferrite 0.3A 2.95Ohm DCR 1008 Automotive T/R
General Purpose Inductor, 10uH, 5%, 1 Element, Ceramic-ferrite-Core, SMD, 1211, CHIP, 1211, HALOGEN FREE AND ROHS COMPLIANT
Inductor RF Chip Unshielded Wirewound 10uH 5% 2.5MHz 18Q-Factor Ceramic/Ferrite 0.2A 3.45Ohm DCR 0805 T/R
Transistor
Power Field-Effect Transistor, 26A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251A, IPAK-3
MOSFET N-CH 30V 13.5A TO251A
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 70A TO251A
MOSFET N-CH 30V 15A TO251A
