Trans IGBT Chip N-CH 1.2KV 96A 3-Pin(3+Tab) T-MAX
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
Trans IGBT Chip N-CH 1.2KV 64A 4-Pin SOT-227
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4
Trans IGBT Chip N-CH 900V 63A 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) TO-247
Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-264MAX, 3 PIN
Diode Rectifier Bridge Single 1.2KV 35A 4-Pin SOT-227
BRIDGE RECT 1P 1.2KV 35A SOT227
500V 30A N-Channel MOSFET, 190mR Rds(on), TO-247
MOSFET N-CH 600V 31A SOT-227
Power Field-Effect Transistor, 30A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3
Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, TO-247, TO-247, 2 PIN
Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, D3PAK-3
Red SMD LED, 1206, 20mA, 625nm, 120°
600V 31A N-Channel MOSFET, 150mR Rds(on), SOT-227-4
MOSFET N-CH 600V 36A TO-247
MOSFET N-CH 500V 38A ISOTOP
MOSFET N-CH 500V 38A SOT-227
