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NPN Phototransistor, TO-18, 35V, 100mA, 830nm

Volume Production

Package/Case: TO-18

Collector Emitter Breakdown Voltage: 35V

Contact Plating: Tin, Matte

Fall Time: 12us

NPN Phototransistor, 35V, 100mA, 830nm, TO-18

Volume Production

Package/Case: TO-18

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 160mV

Collector Emitter Voltage (VCEO): 35V

NPN Phototransistor, 35V, 100mA, 830nm, TO-18

Volume Production

Package/Case: TO-18

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 160mV

Collector Emitter Voltage (VCEO): 35V

IR phototransistor TO-18, BPY62-3, Osram Semiconductors

End of Life

Package/Case: TO-18

Fall Time: 7000ns

Max Collector Current: 100mA

Max Operating Temperature: 125°C

Phototransistor Chip Silicon 830nm 3-Pin TO-18

Unknown

Package/Case: TO-18

Collector Emitter Voltage (VCEO): 35V

Max Collector Current: 100mA

Max Operating Temperature: 125°C

Phototransistor Chip Silicon 830nm 3-Pin TO-18

Unknown

Lens Style: Domed

Max Collector Current: 100mA

Polarity: NPN