Search Results for "BSB012N03LX3G"

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Power Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN

CHIP CARRIER, R-MBCC-N3

Obsolete

Continuous Drain Current (ID): 39A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.2mR

Drain to Source Voltage (Vdss): 30V

MOSFET N-Channel Single 20V 39A 2.8W Surface Mount

CHIP CARRIER, R-MBCC-N3

Obsolete

Continuous Drain Current (ID): 39A

Fall Time: 8.4ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN

CHIP CARRIER, R-MBCC-N3

Obsolete

Continuous Drain Current (ID): 39A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.2mR

Drain to Source Voltage (Vdss): 30V

MOSFET N-Channel Single 20V 39A 2.8W Surface Mount

CHIP CARRIER, R-MBCC-N3

Obsolete

Continuous Drain Current (ID): 39A

Fall Time: 8.4ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C