The BSB012N03LX3G is a N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 89W and a maximum drain to source breakdown voltage of 30V. The device is packaged in a CHIP CARRIER, R-MBCC-N3 package and is halogen free. It is RoHS compliant and features a drain to source resistance of 1.2mR and a turn-off delay time of 47ns.
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| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 16.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 89W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Rds On Max | 1.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 7.9ns |
| RoHS | Compliant |
