Infineon
BSB012N03LX3G
Power Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
Infineon BSB012N03LX3G technical specifications.
General
| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 16.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 89W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Rds On Max | 1.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 7.9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB012N03LX3G Datasheet
Download the complete datasheet for Infineon BSB012N03LX3G to view detailed technical specifications.
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