Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, TO-218AB, TO-218AB, 3 PIN
TRANSISTOR,IGBT,N-CHAN+DIODE,1.2KV V(BR)CES,TO-218AB
Telephone Dialer Circuit, CMOS, PDSO24, SOP-24
Telephone Dialer Circuit, PDSO24, SOP-24
