C3M0016120K - Electronic Components Search

1200 V, 16 mΩ, TO-247-4 Silicon Carbide Power MOSFET

TO-247-4

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Drain to Source Voltage (Vdss): 1200V

RDS(on) Typical: 16mΩ

Continuous Drain Current (Id) @ 25°C: 115A

Maximum Operating Junction Temperature (Tjmax): 175°C

1200 V, 21 mΩ, Silicon Carbide (SiC) MOSFET

TO-247-4

Active

Drain-Source Voltage (Vds): 1200V

Continuous Drain Current (Id) at 25°C: 100A

Drain-Source On-Resistance (Rds(on)) at 25°C: 21mΩ

Max Operating Junction Temperature (Tjmax): 175°C

Silicon Carbide Power MOSFET 1200 V, 32 mΩ, TO-247-4

TO-247-4

Active

Drain Source Breakdown Voltage (Vds): 1200V

On Resistance (Rds_on) at 25°C: 32mΩ

Continuous Drain Current (Id) at 25°C: 63A

Maximum Operating Junction Temperature (Tjmax): 175°C

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