Search Results for &quot; CM600DU-5F &quot;

Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel,

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel,

FLANGE MOUNT, R-XUFM-X7

Transferred

Package/Case: Module

Collector Emitter Breakdown Voltage: 250V

Collector-emitter Voltage-Max: 1.7V

Current Rating: 600A

CM600DU-24NFH

IGBT 1.2kV 600A 150°C Flange Mount

FLANGE MOUNT, R-XUFM-X7

Transferred

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Search Results for "CM600DU-5F"

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Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel,

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel,

FLANGE MOUNT, R-XUFM-X7

Transferred

Package/Case: Module

Collector Emitter Breakdown Voltage: 250V

Collector-emitter Voltage-Max: 1.7V

Current Rating: 600A

CM600DU-24NFH

IGBT 1.2kV 600A 150°C Flange Mount