Search Results for &quot; CM600E3U-12NFH &quot;

Insulated Gate Bipolar Transistor

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.7V

Input: Standard

IGBT MOD 600V 600A 1130W

Obsolete

Package/Case: Module

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.7V

Input: Standard

Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-7

FLANGE MOUNT, R-XUFM-X6

Active

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: UPPER

Pin Count: 7

Search Results for "CM600E3U-12NFH"

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CM600E3U-12NFH

Insulated Gate Bipolar Transistor

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.7V

Input: Standard

IGBT MOD 600V 600A 1130W

Obsolete

Package/Case: Module

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.7V

Input: Standard

Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-7