Enhancement-Mode GaN Power Transistor Half-Bridge 100 V 1.7 A
Power Field-Effect Transistor, 23A I(D), 60V, 0.0044ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75
Off-Line PC Mount Transformer
Power Field-Effect Transistor,
