Search Results for "EPC2TC32"

Configuration Devices for SRAM-Based LUT Devices

Configuration Devices for SRAM-Based LUT Devices

GANFET TRANS 40V 33A BUMPED DIE

Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5

Power Field-Effect Transistor, 11A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6

TRANS GAN 100V 25A BUMPED DIE

Power Field-Effect Transistor, 12A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7

GaN JFET - High-Performance FET Transistor

GaN MOSFET 150V 7mΩ Bumped Die

Power Field-Effect Transistor, 12A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7

GaN MOSFET, 100V, 1A, 0.065Ω, N-Channel, 4-Pin DIE

GaN FET, N-Ch, 80V, 60A, 0.0025Ω, DIE

Power Field-Effect Transistor, 23A I(D), 60V, 0.0044ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75

GaN FET - High Speed, Low Rds(on)

Power Field-Effect Transistor,

Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4

GaN MOSFET, N-Ch, 60V, 60A, 2.2mΩ, 1-Element, DIE

GaN MOSFET, 40V, 60A, 1.5mΩ, N-Channel, DIE

Power Field-Effect Transistor, 12A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE, DIE-7

Power Field-Effect Transistor,