Search Results for &quot; FDB8860 &quot;

N-Channel MOSFET, 30V, 80A, 1.9mR, TO-263AB, SMT

SMALL OUTLINE, R-PSSO-G2

Active

Package/Case: TO-263AB

Continuous Drain Current (ID): 80A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.9mR

Rochester Electronics

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.6mΩ

Volume Production

Package/Case: TO-263

Continuous Drain Current (ID): 31A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 2.3mR

FDB8860-F085

N-Channel MOSFET, 30V, 31A, 1.9mR, TO-263, Surface Mount

SMALL OUTLINE, R-PSSO-G2

Obsolete

Package/Case: TO-263AB

Continuous Drain Current (ID): 31A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.9mR

Search Results for "FDB8860"

Filters

N-Channel MOSFET, 30V, 80A, 1.9mR, TO-263AB, SMT

SMALL OUTLINE, R-PSSO-G2

Active

Package/Case: TO-263AB

Continuous Drain Current (ID): 80A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.9mR

Rochester Electronics

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.6mΩ

Volume Production

Package/Case: TO-263

Continuous Drain Current (ID): 31A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 2.3mR

FDB8860-F085

N-Channel MOSFET, 30V, 31A, 1.9mR, TO-263, Surface Mount