N-Channel Logic Level MOSFET, 30V Vds, 80A continuous drain current, and 1.9mΩ drain-source resistance. Features a TO-263AB surface mount package with 254W power dissipation and a maximum operating temperature of 175°C. This component offers fast switching speeds with a 14ns turn-on delay and 49ns fall time, and is AEC-Q101 qualified. Packaged on an 800-piece tape and reel, this RoHS compliant device is designed for demanding applications.
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Onsemi FDB8860-F085 technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.585nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 254W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 254W |
| Radiation Hardening | No |
| Rds On Max | 2.3mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 14ns |
| Weight | 1.31247g |
| RoHS | Compliant |
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