N-Channel Logic Level MOSFET, 30V Vds, 80A continuous drain current, and 1.9mΩ drain-source resistance. Features a TO-263AB surface mount package with 254W power dissipation and a maximum operating temperature of 175°C. This component offers fast switching speeds with a 14ns turn-on delay and 49ns fall time, and is AEC-Q101 qualified. Packaged on an 800-piece tape and reel, this RoHS compliant device is designed for demanding applications.
PackageTO-263AB
MountingSurface Mount
PolarityN-CHANNEL
Power254W
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Technical Specifications
Onsemi FDB8860-F085 technical specifications.
General
Package/Case
TO-263AB
Continuous Drain Current (ID)
31A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.9mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
49ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
12.585nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
254W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
254W
Radiation Hardening
No
Rds On Max
2.3mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, PowerTrench®
Turn-Off Delay Time
79ns
Turn-On Delay Time
14ns
Weight
1.31247g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDB8860-F085 Datasheet
Download the complete datasheet for Onsemi FDB8860-F085 to view detailed technical specifications.
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