Search Results for &quot; FDC6305N &quot;

Dual N-Ch MOSFET, 20V, 2.7A, 80mΩ, SOT-23-6

SUPERSOT-6

Active

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.7A

Current Rating: 2.7A

Drain to Source Breakdown Voltage: 20V

Rochester Electronics

N-Channel MOSFET 20V 2.7A 960mW Lead Free Bulk

Volume Production

Continuous Drain Current (ID): 2.7A

Current Rating: 2.7A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 80mR

Fairchild

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SMALL OUTLINE, R-PDSO-G6

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Pin Count: 6

FDC6305N_Q

N-CHANNEL MOSFET 20V 2.7A 60mR 900mW Tape and Reel

Obsolete

Continuous Drain Current (ID): 2.7A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 60mR

Fall Time: 8.5ns

Search Results for "FDC6305N"

Filters

Dual N-Ch MOSFET, 20V, 2.7A, 80mΩ, SOT-23-6

SUPERSOT-6

Active

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.7A

Current Rating: 2.7A

Drain to Source Breakdown Voltage: 20V

Rochester Electronics

N-Channel MOSFET 20V 2.7A 960mW Lead Free Bulk

Volume Production

Continuous Drain Current (ID): 2.7A

Current Rating: 2.7A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 80mR

Fairchild

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SMALL OUTLINE, R-PDSO-G6

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Pin Count: 6

FDC6305N_Q

N-CHANNEL MOSFET 20V 2.7A 60mR 900mW Tape and Reel