Search Results for &quot; FDD306P &quot;

P-Channel MOSFET -12V, -6.7A, 28mΩ, TO-252, SMT

SMALL OUTLINE, R-PSSO-G2

Active

Package/Case: TO-252

Continuous Drain Current (ID): 6.7A

Current Rating: -6.7A

Drain to Source Breakdown Voltage: -12V

P-CH MOSFET 12V 2.6A 40mR SOT-23

SOT

Active

Package/Case: TO-236-3

Continuous Drain Current (ID): 2.6A

Current: 26A

Current Rating: -2.6A

FDN306P_F095

P-CHANNEL MOSFET, 2.6A, 12V, 40mR, TO-236-3

Not Recommended for New Design

Package/Case: TO-236-3

Continuous Drain Current (ID): 2.6A

Drain to Source Resistance: 80mR

Drain to Source Voltage (Vdss): 12V

Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Rochester Electronics

MOSFET N-Channel 2.6A 12V 500mW Lead Free

Volume Production

Continuous Drain Current (ID): 2.6A

Current Rating: -2.6A

Drain to Source Resistance: 40mR

Drain to Source Voltage (Vdss): 12V

FDN306P_NL

Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

FDN306P-NL

FDN306P-NL

Unknown

Search Results for "FDD306P"

Filters

FDD306P

P-Channel MOSFET -12V, -6.7A, 28mΩ, TO-252, SMT

SMALL OUTLINE, R-PSSO-G2

Active

Package/Case: TO-252

Continuous Drain Current (ID): 6.7A

Current Rating: -6.7A

Drain to Source Breakdown Voltage: -12V

P-CH MOSFET 12V 2.6A 40mR SOT-23

SOT

Active

Package/Case: TO-236-3

Continuous Drain Current (ID): 2.6A

Current: 26A

Current Rating: -2.6A

FDN306P_F095

P-CHANNEL MOSFET, 2.6A, 12V, 40mR, TO-236-3

Not Recommended for New Design

Package/Case: TO-236-3

Continuous Drain Current (ID): 2.6A

Drain to Source Resistance: 80mR

Drain to Source Voltage (Vdss): 12V

Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Rochester Electronics

MOSFET N-Channel 2.6A 12V 500mW Lead Free

Volume Production

Continuous Drain Current (ID): 2.6A

Current Rating: -2.6A

Drain to Source Resistance: 40mR

Drain to Source Voltage (Vdss): 12V

FDN306P_NL

Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

FDN306P-NL

FDN306P-NL