N-Channel MOSFET 60V 6.1A 35mR SOIC
Power Field-Effect Transistor, 6.1A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
80V N-CH JFET 4A 70mR SOIC Surface Mount
Inductor Power Shielded Wirewound 1.5uH 20% 100KHz Metal 5.3A 0.029Ohm DCR 2019 T/R
Inductor Power Shielded Wirewound 1uH 20% 100KHz Metal 6.1A 0.021Ohm DCR 2019 T/R
Inductor Power Shielded Wirewound 10uH 20% 100KHz Metal 2.4A 0.15Ohm DCR 2019 T/R
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz Metal 4.3A 0.04Ohm DCR 2019 T/R
General Purpose Inductor 2.2uH 20% 3.2A 0.068R Shielded Chip
General Purpose Inductor 1uH 20% 4A 0.044R Shielded Dual-Ended
Inductor Power Shielded Wirewound 1uH 20% 100KHz Metal 5.2A 0.03Ohm DCR 2019 T/R
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz Metal 3A 0.075Ohm DCR 2019 T/R
General Purpose Inductor 6.8uH 20% 1.7A Shielded Dual-Ended
2.2uH General Purpose Inductor, 3.4A, 0.059 ohms, Dual-Ended, Shielded
Inductor Power Shielded Wirewound 0.68uH 20% 100KHz Metal 6.8A 0.019Ohm DCR 2019
Inductor Power Shielded Wirewound 4.7uH 20% 100KHz Metal 3A 0.073Ohm DCR 2019 T/R
General Purpose Inductor 4.7uH 20% 2.6A Shielded Dual-Ended
General Purpose Inductor, Shielded, 4.7uH, 2A, 125C, Dual-Ended Terminals, Surface Mount
General Purpose Inductor 6.8uH 20% 2.6A 0.106R Dual-Ended
N-Channel PowerTrench® MOSFET, 80V, 4.0A, 70mΩ
General Purpose Inductor,