Search Results for &quot; FDS6576 &quot;

P-Channel MOSFET, -20V, -11A, 14mR, SOIC, SMT

SO-8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Current Rating: -11A

Drain to Source Breakdown Voltage: -20V

Fairchild

Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

Rochester Electronics

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Current Rating: -11A

Drain to Source Breakdown Voltage: 20V

FDS6576_Q

MOSFET SO-8 P-CH -20V

Obsolete

Continuous Drain Current (ID): -11A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 14mR

Fall Time: 79ns

FDS6576-NL

008, Plastic Molded, SOIC-8 Pkg, Narrow Body, SMD (S1)<AZ

Volume Production

Search Results for "FDS6576"

Filters

P-Channel MOSFET, -20V, -11A, 14mR, SOIC, SMT

SO-8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Current Rating: -11A

Drain to Source Breakdown Voltage: -20V

Fairchild

Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

Rochester Electronics

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Current Rating: -11A

Drain to Source Breakdown Voltage: 20V

FDS6576_Q

MOSFET SO-8 P-CH -20V

Obsolete

Continuous Drain Current (ID): -11A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 14mR

Fall Time: 79ns

FDS6576-NL

008, Plastic Molded, SOIC-8 Pkg, Narrow Body, SMD (S1)<AZ