Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
IGBT Insulated Gate Bipolar Transistor 1.7kV 2.45V 5mA 150°C
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-12
Trans IGBT Module N-CH 1.7KV 1.39KA 10-Pin PRIME3
